NONVOLATILE MEMORY DEVICE AND READ METHOD THEREOF

摘要

PURPOSE: A non-volatile memory device and a reading method thereof are provided to compensate an increased threshold voltage by changing a read voltage and a reading reference voltage. CONSTITUTION: A memory cell array is connected to a plurality of word lines. A voltage generator applies a selection read voltage to a selection word line(WL28) among the word lines during a reading operation state. The voltage generator applies a non-selection read voltage to a non-selection word line during the reading operation state. The voltage generator changes the level of the non-selection read voltage according to an adjacency state with the selection word line. The voltage generator supplies a non-selection read voltage which is lower than at least one non-selection read voltage among an upper word line(WL29) and a lower word line(WL27) when the threshold voltage of the selection memory cell is reduced.