发明名称 METHOD FOR OBTAINING PHOTOELECTRIC TRANSDUCER
摘要 The invention relates to means for manufacturing optic-electronic transducers. A method for manufacturing photoelectric transducers based onSchottky junction formed onto a substrate by metal and semiconductor layers comprises using a substrate of great area, as a semiconductor layer which directly contacts with preliminary formed a semitransparent metal layer a cadmium sulphide is deposited using immersion plating.Cadmium sulphide is deposited from solution of cadmium salt using thiourea chosen within the range of 0.5-5 g/l and 10-20 g/l , correspondingly, adding grease alkali and ammonia during 20-60 min at temperature of 20 to 70C. The invention provides obtaining photoelectric transducers on great area substrates with pre-set technical characteristics.
申请公布号 UA90809(C2) 申请公布日期 2010.05.25
申请号 UA20080014441 申请日期 2008.12.15
申请人 KOZUB PAVLO ANATOLIIOVYCH 发明人 KOZUB PAVLO ANATOLIIOVYCH;PANCHEVA HANNA MYKHAILIVNA;HRYN HRYHORII IVANOVYCH;KOZUB SVITLANA MYKOLAIVNA
分类号 H01L21/368 主分类号 H01L21/368
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