发明名称 Integrated circuit having a non-volatile memory cell transistor as a fuse device
摘要 A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.
申请公布号 US7724572(B2) 申请公布日期 2010.05.25
申请号 US20060451441 申请日期 2006.06.13
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK JONG-WOOK;LEE SANG-JAE;WON MYUNG-GYOO
分类号 G11C11/407;G11C16/06;G11C7/00;G11C16/04;G11C29/00;H01L21/8247;H01L27/115 主分类号 G11C11/407
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