发明名称 |
Integrated circuit having a non-volatile memory cell transistor as a fuse device |
摘要 |
A semiconductor integrated circuit device has a fuse device that can be electrically disconnected without a breakage caused by using a laser beam or current. The semiconductor integrated circuit device employs, as the fuse device for storing status information, a MOSFET of a single polysilicon EEPROM-type cell manufactured through a process of fabricating a volatile semiconductor memory cell array.
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申请公布号 |
US7724572(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20060451441 |
申请日期 |
2006.06.13 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JONG-WOOK;LEE SANG-JAE;WON MYUNG-GYOO |
分类号 |
G11C11/407;G11C16/06;G11C7/00;G11C16/04;G11C29/00;H01L21/8247;H01L27/115 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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