发明名称 |
Thin film transistor array panel |
摘要 |
A thin film transistor array panel is provided, which includes: a substrate; a gate line formed on the substrate; first and second storage electrodes formed on the substrate and disposed opposite each other with respect to the gate line; a gate insulating layer formed in the gate line and the first and the second storage electrodes; a curved data line formed on the gate insulating layer; a thin film transistor connected to the gate line and the data line; a passivation layer formed on the data line and the thin film transistor; a pixel electrode formed on the passivation layer, connected to the thin film transistor, and having an obtuse corner and an acute corner; and an overpass cross over the gate line and connected to the first and the second storage electrodes.
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申请公布号 |
US7724338(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20060602540 |
申请日期 |
2006.11.20 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KWON EEN-MI;SHIN AE;BAEK SEUNG-SOO;TAK YOUNG-MI |
分类号 |
G02F1/1343;G02F1/1368;G02F1/1333;G02F1/136;G02F1/139;H01L21/77;H01L27/02;H01L29/786 |
主分类号 |
G02F1/1343 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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