发明名称 |
Nonvolatile semiconductor memory device having dummy bit line with multiple sections |
摘要 |
A nonvolatile semiconductor memory device is disclosed having a dummy bit line formed from a plurality of dummy bit line sections. The particular dummy bit line sections are variously connected a common source line and a P-type well region.
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申请公布号 |
US7724597(B2) |
申请公布日期 |
2010.05.25 |
申请号 |
US20060526015 |
申请日期 |
2006.09.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE SEUNG JAE |
分类号 |
G11C7/02 |
主分类号 |
G11C7/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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