发明名称 FAIL BIT COUNTER OF NON VOLATILE MEMORY DEVICE
摘要 PURPOSE: A fail bit counter of a nonvolatile memory device is provided to output a pass signal if the number of fail bit is small by setting the available number of bits in advance. CONSTITUTION: A reference current supplying part(210) supplies a reference current and a reference voltage including a current mirror shaped constant current source. A pass fail status check part(220) comprises pull-down parts and a pull-up parts. The pass fail status check part changes the voltage of a first connection node according to the number of fail cells. A pass fail signal generating part compares a reference voltage and the voltage of a first connection node. The pass fail signal generating part generates a pass signal or a fail signal.
申请公布号 KR20100054476(A) 申请公布日期 2010.05.25
申请号 KR20080113423 申请日期 2008.11.14
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHO, MYUNG
分类号 G11C16/34;G11C16/06;G11C16/30 主分类号 G11C16/34
代理机构 代理人
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