| 摘要 |
A non-volatile memory device includes a first cell group including memory cells other than memory cells adjacent to a drain select transistor in a block, and a second cell group including the memory cells adjacent to the drain select transistor in the block. An erase operation is performed on the memory cells in the block. The first cell group is programmed by applying a first soft programming voltage to the first cell group. The second cell group is programmed by applying a second soft programming voltage to the second cell group.
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