SUBSTRATE PROCESSING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURING METHOD, AND TEMPERATURE CONTROLLING METHOD

摘要

PURPOSE: A substrate processing device, a method for manufacturing a semiconductor device, and a temperature controlling method are provided to uniformize the film thickness and the film quality by processing wafers on other positions of a boat with a uniform thickness. CONSTITUTION: A first operation parameter setter determines a first operation parameter correction value based on the film thickness accumulated on a reactive container. A second operation parameter setter(43) determines a second operation parameter correction value based on the film thickness accumulated on a supplement substrate. A third operation parameter setter(44) determines a third operation parameter correction value based on the number of the supplement substrates. An operation parameter calculator(45) calculates the operation parameter using the first to third operation parameter correction values.