METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE WITH VERTICAL CHANNEL TRANSISTOR

摘要

PURPOSE: A method for manufacturing a semiconductor device including a vertical channel transistor is provided to improve manufacturing efficiency by directly patterning a conductive layer in order to form word-lines. CONSTITUTION: A plurality of pillar structures(33) is formed on the upper side of a substrate. A gate electrode(35) is formed on the lateral side of the pillar structures. A sacrificial layer which fills the space between pillar structures is formed. The sacrificial layer and the substrate are selectively etched to form a trench(38) on the substrate. A first interlayer insulation layer for filling the trench is formed and the sacrificial layer is removed. A second interlayer insulation layer for filling the space between the pillar structures is formed on the first interlayer insulation layer.