METHOD OF FABRICATING SILICON NANO CRAYSTAL STACK STRUCTURE AND METHOD OF FABRICATING THIN FILM TRANSISTOR SUBSTRATE

摘要

PURPOSE: A method of fabricating a silicon nano crystal stack structure and a method are provided to prevent the deterioration of an insulating substrate by forming a gate wiring with a sputtering method in low temperature. CONSTITUTION: In a method of fabricating a silicon nano crystal stack structure and a method, an insulating substrate(10) is provided. A silicon nano-crystal insulating layer is formed an insulating layer by using a reaction gas. The reaction gas comprises a silane gas and a hydrogen gas. The silicon nano crystal(1150) is formed while the silicon nano crystal insulating layer is formed.