PHASE CHANGEABLE MEMORY DEVICE PREVENTABLE LIFTING OF PHASE CHANGEABLE PATTERN

摘要

PURPOSE: A phase change memory device is provided to reduce the lifting phenomenon of a phase change pattern by fixing the both end of the phase change pattern with heating electrodes. CONSTITUTION: A plurality of word lines(110) is formed on a semiconductor substrate. The word lines are expanded in parallel. A phase change pattern(130) perpendicularly crosses over a pair of word lines. The both end of the phase change pattern contacts with heating electrodes which are arranged on the word lines. The part of the phase change pattern, crosses over a space between the word lines, is an oblique line.