| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to improve the contact resistance of the device by etching the epitaxial layer in order to increase the surface area of an epitaxial layer. CONSTITUTION: A plurality of conductive patterns is formed on the upper side of a substrate(11). An epitaxial layer(14A) which is a pad layer is formed in a space between the conductive pattern. An interlayer insulation layer is formed on the epitaxial layer to fill the space between the conductive pattern. The interlayer insulation layer is selectively etched to form a contact hole. The epitaxial layer is isotropically etched. The surface of the epitaxial layer under a contact hole has a pre-set curvature. A plug material which fills the contact hole is formed on the epitaxial layer.
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