| 摘要 |
<p>PURPOSE: A method for manufacturing a semiconductor device with a vertical channel transistor is provided to prevent the loss of an insulation layer during a spacer removal process by improving an etching selectivity between the insulation layer and a spacer nitride layer. CONSTITUTION: A plurality of active pillars is formed on a substrate. A gate electrode(34) is formed to surround the lateral lower side of the active pillars. A spacer nitride layer(35) is formed on the entire surface of a structure which includes a gate electrode. An insulation layer fills a space between active pillars. A word-line damascene pattern(40) is formed by selectively etching the insulation layer. The spacer nitride layer which is exposed by the damascene pattern is removed using a dry-etching method.</p> |
