| 摘要 |
<p>PURPOSE: A method for manufacturing a magnet tunnel junction device is provided to prevent interference phenomenon between magnet tunnel junction devices by forming concave structure of magnet tunnel junction devices in pillar shape. CONSTITUTION: A plurality of open regions is arranged on an insulation layer. A first electrode, a pinning layer(15A) and a pinned layer(16A) are stacked on the base side and the lateral side of the open regions in order to form a first pattern. A stacked layer is formed on the entire structure with the first pattern in order to fill the open regions. A tunnel insulation layer, a ferromagnetic layer and a conductive layer for a second electrode are successively stacked. The stacked layer is etched using a photo resist pattern as an etching stop layer in order to form a second pattern.</p> |
