| 摘要 |
<p>#CMT# #/CMT# The method involves realizing fracture of a composite structure (100) along a fragilization plane defined between a thin layer and a rest layer i.e. negative layer, of a donor substrate e.g. gallium nitride plate. The composite structure is maintained against stiffeners (118) at the moment of releasing of energy during fracturing of the structure, where the stiffeners are placed on both sides of the structure and spaced from the structure. #CMT# : #/CMT# An independent claim is also included for a housing for a pod of a thermal annealing installation. #CMT#USE : #/CMT# Method for fracturing a composite structure, using a thermal annealing installation (claimed), which is utilized for epitaxy of group III/N material e.g. gallium nitride, aluminum gallium nitride or indium gallium nitride, group III/V material e.g. gallium arsenide or group IV material e.g. germanium, in electronic, optical or optoelectronic field. #CMT#ADVANTAGE : #/CMT# The composite structure is maintained against stiffeners placed on both sides of the structure at the moment of releasing of energy so as to dampen the released energy, thus limiting the risk of breakage of the rest layer of the donor substrate during fracture. #CMT#DESCRIPTION OF DRAWINGS : #/CMT# The drawing shows a magnified view of an installation for implementing a composite structure fracturing method. e1, e2 : Spaces 100 : Composite structure 102 : Container 118 : Stiffeners 120 : Housing.</p> |
