| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To reliably join bumps to each other by low pressure without application of excessive pressure when laminating an SOI (silicon on insulator) substrate having TSV (through silicon via). <P>SOLUTION: The laminated semiconductor device includes a plurality of semiconductor devices each including: a substrate having an insulating layer and an SOI layer formed in contact with the insulating layer; a through-hole extending between the main surface and backside of the substrate; and a through connection part having an end surface substantially flush with the main surface or backside, which is formed in the through-hole. In the laminated semiconductor device, one semiconductor device is laminated on the other semiconductor surface by joining the end surface of the through connection part of one semiconductor device to the end surface of the through connection part of the other semiconductor device. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
