| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nitride-based semiconductor laser device which can suppress formation of a modified layer on an electrode layer caused by a manufacturing process. Ž<P>SOLUTION: The nitride-based semiconductor laser device 100 includes a p-type contact layer 24 formed on a MQW active layer 22 made of InGaN, and a p-side ohmic electrode 25 formed in a stripe shape as viewed from a planar side at the side of the p-type contact layer 24 opposed to the MQW active layer 22 while comprising a Pt electrode layer 31, a Pd electrode layer 32, a Pt electrode layer 33. The Pt electrode layer 33 has a thickness not less than 10 times the thickness of the Pt electrode layer 31 and not more than 30 times thereof. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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