| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for depositing a Ti film, when a Ti film is deposited by CVD (Chemical Vapor Deposition), which can deposit a Ti film in which resistance is lower, and also, variation in the resistance is reduced, and can reduce plasma damage. SOLUTION: When a silicon wafer is arranged at the inside of a chamber, while introducing treatment gas including gaseous TiCl<SB>4</SB>and gaseous H<SB>2</SB>, plasma is generated inside the chamber, and the reaction of the treatment gas is accelerated by the plasma so as to deposit a Ti film on the silicon wafer, after the introduction of the gaseous TiCl<SB>4</SB>in a state where the silicon wafer is arranged at the inside of the chamber, the plasma is generated inside the chamber. COPYRIGHT: (C)2010,JPO&INPIT
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