| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a variable resistance element which is rewritable and nonvolatile, and to provide a method for manufacturing the same. <P>SOLUTION: The variable resistance element X includes: an oxide part 4 having P-type semiconductive property; a pair of electrodes 1 joined to the oxide part 4 while separating from each other; a second electrode 2 joined to the oxide part 4 between the pair of electrodes 1; and an electrode 3 joined to the oxide part 4 while having a portion opposed to the electrode 2 through the oxide part 4. The method for manufacturing a variable resistance element includes, for example, steps of: forming a conductive material film on a substrate S; forming an oxide film having P-type semiconductive property on the conductive material film; and forming a pair of electrodes 1 separated from each other and an electrode 2 located between the electrodes 1 on the oxide film. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
