| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus for manufacturing an epitaxial wafer capable of reducing variations in the film thickness of an epitaxial film without causing any abnormal growth on the backside of the epitaxial wafer. SOLUTION: In the manufacturing apparatus 1 for manufacturing the epitaxial wafer WE with a wafer W being mounted substantially concentrically with a susceptor, a center rod 33 is provided to extend in a vertical direction at a side of a non-mounting surface 312 of the susceptor 31 so that its upper end is adjacent to the center of the susceptor 31. With this arrangement, partial radiation light L applied toward the susceptor 31 is diffusely reflected by the center rod 33 before reaching the central part of the susceptor 31, thereby reducing the amount of irradiation of radiant light to the central part of the susceptor 31 as well as lowering the temperature of the part. The center rod 33 and the susceptor 31 are not in face contact, so that the center rod 31 does not take the heat from the susceptor 31, thereby suppressing a local temperature decrease at the central part of the susceptor 31. COPYRIGHT: (C)2010,JPO&INPIT |
