| 摘要 |
PROBLEM TO BE SOLVED: To provide a vertical bipolar transistor having been subjected to salicide processing through which a base-side depletion layer sufficiently spreads by forming a salicide offset region to prevent problems such as a leakage current and a decrease in junction breakdown voltage. SOLUTION: The vertical bipolar transistor includes a collector region 2 of a first conductivity type (N type) formed on a semiconductor substrate 1, a base region 5 of a second conductivity type (P type) formed in the collector region 2, an emitter region 6 of the first conductivity type formed in the base region 5, a field oxide film 4 formed at a surface part of the collector region 2 while enclosing the base region 5, and a salicide layer 14 formed on the base region 5. A surface of the base region 5 is provided with a salicide region where a salicide layer 14 is formed and a salicide offset region 15 where the salicide layer is not formed between an end of the field oxide film 4 and an end of the salicide region. COPYRIGHT: (C)2010,JPO&INPIT |
