| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device for securing a desired transistor characteristic (gm, etc.) and achieving class AD bias for a transistor, such as a gate DC-biased amplifying circuit. SOLUTION: The semiconductor integrated circuit device 20 includes: an amplifying circuit 21 which respectively includes one or more input terminals and one or more output terminals; a replica circuit 22 which includes the same DC characteristics as those of the amplifying circuit; a reference voltage generation circuit 23 which is provided between a bias terminal of the replica circuit and a reference potential point, and which generates a reference voltage at the bias terminal; and a feedback circuit 24 which takes a difference between the reference voltage generated at the bias terminal of the replica circuit and the voltage generated at a bias terminal of the amplifying circuit, and which performs feedback by providing negative feedback of the difference to the bias terminal of the amplifying circuit so that the voltage generated at the bias terminal of the amplifying circuit is made equal to the reference voltage generated at the bias terminal of the replica circuit. COPYRIGHT: (C)2010,JPO&INPIT |
