发明名称 |
REPLACING DEFECTIVE MEMORY BLOCKS IN RESPONSE TO EXTERNAL ADDRESSES |
摘要 |
Electronic systems and methods of operating memory devices are provided. In one such embodiment, a memory device receives an external address that addresses a non-defective memory block of a sequence of memory blocks of the memory device in place of a defective memory block of the sequence of memory blocks such that the non-defective memory block replaces the defective memory block. The non-defective memory block is proximate non-defective memory block following the defective memory block in the sequence of memory blocks that is available to replace the defective memory block.
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申请公布号 |
US2010124133(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20080274426 |
申请日期 |
2008.11.20 |
申请人 |
SARIN VISHAL;NGUYEN DZUNG H;RADKE WILLIAM H |
发明人 |
SARIN VISHAL;NGUYEN DZUNG H.;RADKE WILLIAM H. |
分类号 |
G11C29/00;G11C8/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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