ELECTRICALLY-DRIVEN OPTICAL PROXIMITY CORRECTION TO COMPENSATE FOR NON-OPTICAL EFFECTS

摘要

PURPOSE: An electrically-driven optical proximity correction to compensate for non-optical effects is provided to compensate non-optical change by generating a pattern mask with respect to an integrated circuit design. CONSTITUTION: The physical layout of an integrated circuit design is received(80). The physical layer is converted into a mask design with a contour(86). Based on the mask design, a part of photolithography configuration in an integrated circuit chip is simulated(88). An electrical property is obtained from the simulated integrated circuit chip(90). Whether the electrical property satisfies a design specification is verified(92). Based on the verification result, the contour is corrected(94). A mask design with the corrected contour is saved(96).