发明名称 METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving productivity by suppressing variation in photoelectric conversion efficiency inside a large-area substrate surface and variation in module output between lots. <P>SOLUTION: The method of manufacturing the photoelectric conversion device 100 includes a step of forming a photoelectric converting layer 3 of silicon on a substrate 1 by using a plasma CVD technique using a gas containing a silane gas and a hydrogen gas as a raw material gas under the condition where a flow rate of the hydrogen gas per unit area of the substrate 1 is 80 slm/m<SP>2</SP>or more. <P>COPYRIGHT: (C)2010,JPO&INPIT</p>
申请公布号 JP2010114299(A) 申请公布日期 2010.05.20
申请号 JP20080286442 申请日期 2008.11.07
申请人 MITSUBISHI HEAVY IND LTD 发明人 KUREYA MASAYUKI;SAKAI TOMOTSUGU
分类号 H01L31/04 主分类号 H01L31/04
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