发明名称 |
METHOD OF MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE, AND PHOTOELECTRIC CONVERSION DEVICE |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a photoelectric conversion device capable of improving productivity by suppressing variation in photoelectric conversion efficiency inside a large-area substrate surface and variation in module output between lots. <P>SOLUTION: The method of manufacturing the photoelectric conversion device 100 includes a step of forming a photoelectric converting layer 3 of silicon on a substrate 1 by using a plasma CVD technique using a gas containing a silane gas and a hydrogen gas as a raw material gas under the condition where a flow rate of the hydrogen gas per unit area of the substrate 1 is 80 slm/m<SP>2</SP>or more. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010114299(A) |
申请公布日期 |
2010.05.20 |
申请号 |
JP20080286442 |
申请日期 |
2008.11.07 |
申请人 |
MITSUBISHI HEAVY IND LTD |
发明人 |
KUREYA MASAYUKI;SAKAI TOMOTSUGU |
分类号 |
H01L31/04 |
主分类号 |
H01L31/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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