| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide compound semiconductor particles containing a crystal phase with a chalcopyrite type crystal structure regardless of fine particles, a method for producing the same, and a dense compound semiconductor film containing a crystal phase with a chalcopyrite type crystal structure as a main crystal phase, having P type properties as a semiconductor element, and also having a uniform composition in the thickness direction. <P>SOLUTION: A precursor is formed from a solution prepared by dissolving a compound containing Cu or Ag, a compound containing at least one of In, Ga and Al, and sodium oleate or sodium maleate in a mixed solvent of water and a solvent having lower polarity than the water, a compound containing any one of S, Se and Te is added to the precursor, and they are heated to obtain the objective compound semiconductor particles containing the crystal phase with the chalcopyrite type crystal structure and having an aspect ratio (major axis/minor axis) of≥1.5 and an average length of major axes of 0.05-0.2μm. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
