DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a display device which improves characteristics of a bottom-gate-type thin film transistor.

SOLUTION: The display device includes: a conductive layer on which gate electrodes are provided; a first insulation layer provided on the conductive layer; a semiconductor layer which is provided on the first insulation layer and forms semiconductor films containing polycrystalline silicon above the gate electrodes; and a second insulation layer provided on the semiconductor layer. The semiconductor film includes a channel region which overlaps with the gate electrode in a plan view. In the channel region, a portion of the semiconductor film which is in contact with the second insulation layer exhibits higher impurity concentration than a portion of the semiconductor film which is in contact with the first insulation layer.

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