BIPOLAR TYPE SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a bipolar type semiconductor device for suppressing occurrence of a surge voltage. SOLUTION: An IGBT 100 has an n-type floating region 15 that is provided in a p-type body region 14 and parts the body region 14 in a direction for connecting a base region 13 and an emitter region 16. The ratio of the total number of carriers (the total number of free electrons/the total number of holes) between the total number of free electrons in the floating region 15 and the total number of holes in a body region 14b existing at the side of the base region 13 as compared of the floating region 15 is set to a range for preventing a parasitic thyristor from operating in turn-on. COPYRIGHT: (C)2010,JPO&INPIT