| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a group III nitride semiconductor which can prevent a semiconductor element including a crystal layer of the group III nitride semiconductor from decreasing in quality and has superior manufacturing efficiency, a method of manufacturing the group III nitride semiconductor element, and the group III nitride semiconductor and group III nitride semiconductor element. Ž<P>SOLUTION: The method of manufacturing the group III nitride semiconductor includes a non-crystal layer forming stage A of forming a non-crystal layer of group III nitride on an upper surface of a base layer, a protective layer forming stage (B) of forming a protective layer on an upper surface of the non-crystal layer, an etching stage (C) of etching away a part of the non-crystal layer, and a semiconductor crystal layer forming stage (D) of heat-treating and crystallizing the non-crystal layer in a state where the protective layer is formed, to convert the non-crystal layer into a crystal layer of the group III nitride semiconductor. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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