发明名称 SOLID-STATE IMAGING DEVICE, DRIVE METHOD OF SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging device which achieves fine pixel size and increases a saturation charge amount (Qs) and sensitivity, a drive method of the solid-state imaging device, and an electronic apparatus using the solid-state imaging device. SOLUTION: The solid-state imaging device includes: plural photodiodes PD formed in different depths in a substrate 10 while respectively having a junction surface between a first conductivity type impurity region and a second conductivity type impurity region. Further, the solid-state imaging device has a vertical transistor Tr formed along the depth for reading out signal charge accumulated in the photodiodes PD. The solid-state imaging device has an overflow path 21 for connecting a plurality of photodiodes (for example, a first photodiode PD1 and a second photodiode PD2) to each other and a photodiodes PD and a floating diffusion region 16 to each other when electric charge is accumulated in the photodiodes PD. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010114275(A) 申请公布日期 2010.05.20
申请号 JP20080285909 申请日期 2008.11.06
申请人 SONY CORP 发明人 NISHIFUJI HIROMASA;MABUCHI KEIJI;OGISHI HIROKO;YAMADA AKITA
分类号 H01L27/146;H04N5/335;H04N5/369;H04N5/374 主分类号 H01L27/146
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