| 摘要 |
PROBLEM TO BE SOLVED: To provide a means for simply and highly accurately analyzing metal impurities that have adverse effects on the characteristics of a semiconductor substrate. SOLUTION: A method for evaluation of the metal contamination in the semiconductor substrate includes a step of forming a roughened area on one surface out of both sides of the semiconductor substrate, a step of heating the semiconductor substrate after forming the roughened area on one surface and a step for analysis of a metal component in a solution after scanning the roughened area with the solution. COPYRIGHT: (C)2010,JPO&INPIT |
