| 摘要 |
A method of forming a MEMS device, in which a MEMS device portion (20) is formed as a patterned portion of the silicon layer (14) of an SOI substrate (10,12,14). The MEMS device portion (20) is covered with a sacrificial layer (22) and a cap layer (26), so that further processing above or around the MEMS device can be implemented using standard CMOS processing, to form integrated circuit components (30). The MEMS device is completed by forming an opening (33) in the base layer (10) of the SOI substrate beneath the MEMS device portion and using the opening to remove the insulator layer of the SOI substrate and the sacrificial layer, thereby providing a space above and below the MEMS device portion. The opening in the base layer is closed with a further substrate (34). |
