METHOD AND SEMICONDUCTOR MANUFACTURING SYSTEM FOR DETECTING BAD WAFER USING STANDARD DATABASE OPTICAL CRITICAL DIMENSION

摘要

PURPOSE: A method for detecting a bad wafer using a data-based standard optical critical dimension and a system for manufacturing a semiconductor using the same are provided to improve productivity by omitting subsequent processes with respect to the bad wafer. CONSTITUTION: A wafer is loaded in a measurement unit(S200). Light is radiated to the optical critical measurement pattern of the loaded wafer(S210). Reflected light from the loaded wafer is detected(S220). A sample data for a comparison process is prepared(S230). The reflected light is compared to the sample data(S240). If different spectrum data is verified, the subsequent processes for the wafer is not proceeded(S255).