| 摘要 |
PURPOSE: An image sensor and a method for manufacturing the same are provided to improve photo-charge-collection efficiency by forming a lower electrode in a mesh shape in order to secure a wide surface area for collecting photo-charges. CONSTITUTION: A semiconductor substrate(100) which includes a read-out circuitry is prepared. An interlayer insulation layer(160) is formed on the semiconductor substrate. The interlayer insulation layer includes a first metal, a second metal and a third metal(153) in order to be electrically connected with the read-out circuitry. A plurality of via-contacts(154a) is electrically connected with the third metal by passing through the interlayer insulation layer. A lower electrode(175) in a mesh shape is formed on the via-contacts. A photo-diode(200) is formed on the lower electrode.
|
