| 摘要 |
PURPOSE: A large-sized shower head for a plasma enhanced chemical vapor deposition apparatus is provided to minimize metal contamination by coating the surface of an injection hole and the surface of an auxiliary electrode with CVD silicon carbide. CONSTITUTION: A supply unit for a reaction gas supplies a reaction gas to a plasma generation unit. A supply unit for a source gas supplies a source gas to the inside of a process chamber. A shower head(150) injects the reaction gas to the inside of the process chamber. The shower head is composed of a main electrode(160) and an auxiliary electrode(170). The auxiliary electrode is located on the upper side of the main electrode. The auxiliary electrode includes an inlet hole(171) through which the reaction gas is flowed.
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