发明名称 |
METAL-OXIDE-METAL STRUCTURE WITH IMPROVED CAPACITIVE COUPLING AREA |
摘要 |
A stacked metal-oxide-metal (MOM) capacitor structure and method of forming the same to increase an electrode/capacitor dielectric coupling area to increase a capacitance, the MOM capacitor structure including a plurality of metallization layers in stacked relationship; wherein each metallization layer includes substantially parallel spaced apart conductive electrode line portions having a first intervening capacitor dielectric; and, wherein the conductive electrode line portions are electrically interconnected between metallization layers by conductive damascene line portions formed in a second capacitor dielectric and disposed underlying the conductive electrode line portions.
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申请公布号 |
US2010123214(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20080274255 |
申请日期 |
2008.11.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN CHAO-CHI;KING MING-CHU;CHOU CHEN CHENG |
分类号 |
H01L29/92;H01G4/005 |
主分类号 |
H01L29/92 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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