发明名称 |
METHODS OF FORMING SEMICONDUCTOR DEVICES HAVING GATES WITH DIFFERENT WORK FUNCTIONS USING NITRIDATION |
摘要 |
A semiconductor device that has a dual gate having different work functions is simply formed by using a selective nitridation. A gate insulating layer is formed on a semiconductor substrate including a first region and a second region, on which devices having different threshold voltages are to be formed. A diffusion inhibiting material is selectively injected into the gate insulating layer in one of the first region and the second region. A diffusion layer is formed on the gate insulating layer. A work function controlling material is directly diffused from the diffusion layer to the gate insulating layer using a heat treatment, wherein the gate insulting layer is self-aligned capped with the selectively injected diffusion inhibiting material so that the work function controlling material is diffused into the other of the first region and the second region. The gate insulating layer is entirely exposed by removing the diffusion layer. A gate electrode layer is formed on the exposed gate insulating layer. A first gate and a second gate having different work functions are respectively formed in the first region and the second region by etching the gate electrode layer and the gate insulating layer
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申请公布号 |
US2010124805(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20090540090 |
申请日期 |
2009.08.12 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
NA HOON-JOO;SHIN YU-GYUN;PARK HONG-BAE;CHO HAG-JU;HONG SUG-HUN;HYUN SANG-JIN;HONG HYUNG-SEOK |
分类号 |
H01L21/8238 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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