| 摘要 |
PURPOSE: A semiconductor memory device is provided to rapidly execute a pre-charge operation with reducing current consumption by enabling a bit line pair to gradually maintain a reference voltage. CONSTITUTION: A bit line pair constitutes a memory cell array(220). A bit line equalizing driving part(100) receives a bit line equalizing signal. The bit line equalizing driving part generates a first pre-charge signal of a first voltage level and a second pre-charge signal of a second voltage level. A bit line pre-charging part(210) interlinks a bit line pair in response to the first pre-charge signal. A bit line pre-charging part maintains the voltage level of the bit line pair to a reference voltage level in response to the second pre-charge signal. |
