| 摘要 |
PURPOSE: A semiconductor memory device and a power up circuit thereof are provided to control the level of a power up signal by sensing the level of the power up signal outputted from a power up signal generating unit. CONSTITUTION: A power up circuit(300) outputs a power up signal in response to an external supply power source. An internal circuit is driven in response to the power up signal. The power up circuit comprises a coupling prevention unit. A coupling prevention unit(200) controls the level of a power up signal in response to the power up signal. The coupling prevention unit comprises at least one capacitor connected between a power up signal output node(N) and a ground terminal. |
