发明名称 SEMICONDUCTOR MEMORY DEVICE WITH READ DATA BUS INVERSION FUNCTION AND TEST METHOD THEREOF
摘要 PURPOSE: A RDBI function and a test method thereof are provided to offer a RDBI(Read Data Bus Inversion) function capable of comparing data in a real time by generating a flag signal presenting that data of data bus is inversed. CONSTITUTION: Data of an input test pattern are provided to data input/output pads. Data of the input test pattern pass through a memory shell core block(110) and is mounted in the data bus. If data on the data bus is corresponding to an inversion condition, data on the data bus is inversed and outputted. A flag signal(FLAG) which presents that data on the data bus is inversed is generated. After comparing inversed data on the data bus(120) with the flag signal, data is transmitted to data input/output pads. It is determined whether data transmitted to the data input/output pads is an output test pattern.
申请公布号 KR20100053202(A) 申请公布日期 2010.05.20
申请号 KR20080112218 申请日期 2008.11.12
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 MOON, GIL SHIN
分类号 G11C7/10;G11C29/00 主分类号 G11C7/10
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