| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a technique for easily and suitably evaluating whether a wafer has a high possibility of defect occurrence in a device process step. Ž<P>SOLUTION: A wafer evaluation method includes: performing chemical dry etching on the wafer W (step S2), observing outer appearance of an end surface portion of the wafer W subjected to the chemical dry etching through an SEM (Scanning Electron Microscope) (step S3), and evaluating whether the wafer W has a high possibility of defect occurrence in a device process based upon an observation result of the end surface portion of the wafer W (step S4). Thus, the outer appearance of the end surface portion of the wafer W in the dry etching which is highly relevant to the occurrence of a defect in the device process is observed, so that it can be suitably evaluated whether the wafer W has a high possibility of defect occurrence in the device process. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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