发明名称 SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS
摘要 A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
申请公布号 US2010123256(A1) 申请公布日期 2010.05.20
申请号 US20090619753 申请日期 2009.11.17
申请人 SEIKO EPSON CORPORATION 发明人 YODA TSUYOSHI;HARA KAZUMI
分类号 H01L23/48;H01L21/768 主分类号 H01L23/48
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