发明名称 |
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREOF, AND ELECTRONIC APPARATUS |
摘要 |
A semiconductor device includes a semiconductor substrate and a through electrode provided in a through hole formed in the semiconductor substrate. The through electrode partially protrudes from a back surface of the semiconductor substrate, which is opposite to an active surface thereof. The through electrode includes a resin core and a conductive film covering at least a part of the resin core.
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申请公布号 |
US2010123256(A1) |
申请公布日期 |
2010.05.20 |
申请号 |
US20090619753 |
申请日期 |
2009.11.17 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
YODA TSUYOSHI;HARA KAZUMI |
分类号 |
H01L23/48;H01L21/768 |
主分类号 |
H01L23/48 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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