| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device in which read out operation cycles of a ferroelectric memory device can be reduced more. SOLUTION: In a ferroelectric memory device 100, a first bit line BL is changed to first data potential according to first data stored in the first ferroelectric capacitor C1, a second bit line/BL is changed to a second data potential according to second data obtained by inverting a logic of the first data, then, the second MOS transistor T2 and the fourth MOS transistor T4 are turned on. COPYRIGHT: (C)2010,JPO&INPIT
|
