PROCESS FOR FABRICATING A FILM OF AN ANTIFERROMAGNETIC MATERIAL WITH CONTROLLED MAGNETIC STRUCTURES

摘要

The present invention relates to a process for fabricating antiferromagnetic films, and more particularly those that are used in spintronics. The process according to the invention comprises the following steps: deposition (1) on a substrate of a first film with a thickness sufficient to establish a defined magnetic order from one of the ferrimagnetic, ferromagnetic, paramagnetic and diamagnetic orders; after said order has been established, application (2) of a magnetic field having an amplitude and a duration that are sufficient to shift the magnetic domain walls of said first film from a first random distribution to a second random distribution; and deposition (3), on said first film that has had its magnetic domain walls shifted, of a second film of an antiferromagnetic material into which, during growth, at least one of the components of material of said first film may be integrated by diffusion.