READ CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE

摘要

PURPOSE: A read-out circuit and a semiconductor memory device thereof are provided to reduce the scale of a circuit by deciding the number of sense amplifier according to a byte selector. CONSTITUTION: A byte selector(B0~B3) outputs a first or a eighth data signal from a plurality of memory cells based on the address, respectively. A sense amplifier simultaneously senses each first data signal from a plurality of byte selectors before the address is decided. The sense amplifier(A1~A4) senses each second or eighth data signal from the byte selector corresponding to the address which is determined. A selector circuit selects a first data signal from the byte selector corresponding to the confirmed address among each first data signal after the address decision. The selector circuit(SL1~SL5) successively selects a second or the eighth data signal.