| 摘要 |
PROBLEM TO BE SOLVED: To provide a structure for improving yielding, while keeping the stable characteristic of a semiconductor device even when a gate electrode and a semiconductor layer are formed by a manufacturing method with lower accuracy compared with that of a source electrode and a drain electrode, so as to generate the position deviations. SOLUTION: Patterning is performed in the gate electrode, source electrode, drain electrode, and semiconductor layer of a TFT by a coating method, a drop method, and a print method. In this case, the comb-shape drain electrode is fitted to the comb-shape source electrode. Besides, the gate electrode and the semiconductor layer are arranged at interval from the comb back parts of the source electrode and the drain electrode. The gate electrode and the semiconductor layer are different in width in a comb shape extending direction (a channel width direction), and arranged to allow one to enclose the other, thereby raising a position deviation margin. COPYRIGHT: (C)2010,JPO&INPIT
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