发明名称 METHOD OF TREATING SURFACE OF SEMICONDUCTOR SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of treating the surface of a semiconductor substrate, which can clean and dry the substrate while preventing collapse of a pattern. SOLUTION: The method includes: cleaning the semiconductor substrate by using a chemical solution; removing the chemical solution by using pure water; forming a water repellent protective film on the surface of the semiconductor substrate; rinsing the semiconductor substrate by using pure water; and drying the semiconductor substrate. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010114439(A) 申请公布日期 2010.05.20
申请号 JP20090243777 申请日期 2009.10.22
申请人 TOSHIBA CORP 发明人 TOMITA HIROSHI;KOIDE TATSUHIKO;OGUCHI HISASHI;SHIMAYAMA KENTARO;IIMORI HIROYASU;JI LINAN
分类号 H01L21/304 主分类号 H01L21/304
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