| 发明名称 |
Memory device and writing method thereof |
| 摘要 |
A write amplifier for driving a bit line connected to a selected phase change memory cell drives the bit line with a first current driving capability and then drives the bit line with a second current driving capability lower than the first current driving capability. |
| 申请公布号 |
US2010124104(A1) |
申请公布日期 |
2010.05.20 |
| 申请号 |
US20090591295 |
申请日期 |
2009.11.16 |
| 申请人 |
ELPIDA MEMORY, INC. |
发明人 |
SATO KOJI;NAKAI KIYOSHI;MAE KENJI |
| 分类号 |
G11C11/00;G11C7/00;G11C8/08 |
主分类号 |
G11C11/00 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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