FABRICATING METHOD FOR THE NON OR SEMI POLAR III-NITRIDE EPI LAYERS AND THE SAME

摘要

PURPOSE: A non-polar or semi-polar nitride semiconductor substrate and a method for manufacturing the same are provided to improve quantum efficiency by performing an ion-doping process with a high concentration. CONSTITUTION: A non-polar or semi-polar sapphire substrate is prepared(S110). A high temperature sapphire nitride layer is formed on the sapphire substrate(S120). A SiN_x layer/a high temperature gallium nitride buffer layer or SiC/a high temperature gallium nitride buffer layer is multiply stacked on the high temperature sapphire nitride layer(S130). A high temperature gallium nitride layer is formed on the high temperature gallium nitride buffer layer(S140).