| 摘要 |
PURPOSE: A complementary metal oxide semiconductor(CMOS) image sensor and a method for manufacturing the same are provided to reduce light loss by separating the colors of light with an internal prism and subsequently transferring the light to photo diodes. CONSTITUTION: A plurality of photo diodes(20) is formed on a semiconductor substrate. A first interlayer insulation layer(24a) is formed on the entire surface of the semiconductor substrate. An internal prism(28) is formed into an inclined plane in order to filter light. A second interlayer insulation layer(24b) including the internal prism is formed on the entire surface of the first interlayer insulation layer. A micro-lens(32) is formed on the second interlayer insulation layer to correspond to the internal prism.
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